IGBT transistor 650V – 30A

The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high-performance, excellent quality, and high ruggedness.FeaturesHigh Ruggedness for Motor ControlVCE(sat) Positive Temperature CoefficientVery Soft, Fast Recovery Anti-Parallel DiodeLow EMIMaximum Junction Temperature +175CLead-Free Finish; RoHS Compliant (Notes 1 & 2)Halogen and Antimony Free. Green Device (Note 3)Electrical CharacteristicsCollector-Emitter Voltage (VCE): 650VDC Collector Curren (Ic): 30ACurrent – Collector Pulsed (Icplus): 60ADiode Forward Current (IF): 30AGate-Emitter Voltage (VGE): +- 20VShort Circuit Withstand Time (tsc): 5usPinoutDocumentsDatasheet